opti mos a power-transistor product summary v ds 30 v r ds(on) 6.7 m w i d 30 a feature n-channel enhancement mode logic level excellent gate charge x r ds(on) product (fom) superior thermal resistance 175c operating temperature avalanche rated d v /d t rated p-to252-3-11 marking 2n03l07 type package ordering code SPD30N03S2L-07 p-to252-3-11 q67042-s4091 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current 1) t c =25c i d 30 30 a pulsed drain current t c =25c i d puls 120 avalanche energy, single pulse i d =30 a , v dd =25v, r gs =25 w e as 250 mj repetitive avalanche energy, limited by t jmax 2) e ar 13 reverse diode d v /d t i s =30a, v ds =24v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 136 w operating and storage temperature t j , t stg -55... +175 c iec climatic category; din iec 68-1 55/175/56 SPD30N03S2L-07 . 29-07-2008 page 1
thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - 0.7 1.1 k/w thermal resistance, junction - ambient, leaded r thja - - 100 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d =85a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 10 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =30a r ds(on) - 7.4 9.8 m w drain-source on-state resistance v gs =10v, i d =30a r ds(on) - 5.3 6.7 1 current limited by bondwire ; with an r thjc = 1.1k/w the chip is able to carry i d = 111a at 25c, for detailed information see app.-note anps071e available at www.infineon.com/optimos 2 defined by design. not subject to production test. 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. SPD30N03S2L-07 . 29-07-2008 page 2
electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =30a 29 58 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1900 2530 pf output capacitance c oss - 740 990 reverse transfer capacitance c rss - 180 270 gate resistance r g - 2.3 - w turn-on delay time t d(on) v dd =15v, v gs =10v, i d =15a, r g =3.6 w - 8 10 ns rise time t r - 17 26 turn-off delay time t d(off) - 62 77.5 fall time t f - 47 59 gate charge characteristics gate to source charge q gs v dd =24v, i d =30a - 6 8 nc gate to drain charge q gd - 18 27 gate charge total q g v dd =24v, i d =30a, v gs =0 to 10v - 51 68 gate plateau voltage v (plateau) v dd =24v, i d =30a - 3.1 - v reverse diode inverse diode continuous forward current i s t c =25c - - 30 a inv. diode direct current, pulsed i sm - - 120 inverse diode forward voltage v sd v gs =0v, i f =30a - 0.9 1.3 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 41 51 ns reverse recovery charge q rr - 46 58 nc SPD30N03S2L-07 . 29-07-2008 page 3
1 power dissipation p tot = f ( t c ) parameter: v gs 3 4 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 150 SPD30N03S2L-07 p tot 2 drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 4 8 12 16 20 24 a 32 SPD30N03S2L-07 i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPD30N03S2L-07 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a SPD30N03S2L-07 i d r ds(on) = v ds / i d 1 ms 100 s t p = 14.0 s SPD30N03S2L-07 . 29-07-2008 page 4
5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 5 10 15 20 25 30 35 40 45 50 55 60 a 75 SPD30N03S2L-07 i d v gs [v] a a 2.6 b b 2.8 c c 3.0 d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i p tot = 136 w i 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 a 65 i d 0 2 4 6 8 10 12 14 16 18 20 w 24 SPD30N03S2L-07 r ds(on) v gs [v] = d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i i 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 v 4 v gs 0 5 10 15 20 25 30 35 40 45 50 a 60 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 100 a 130 i d 0 10 20 30 40 50 60 70 s 90 g fs SPD30N03S2L-07 . 29-07-2008 page 5
9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 30 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 2 4 6 8 10 12 w 16 SPD30N03S2L-07 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 v 2.5 v gs(th) 1ma 85a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a SPD30N03S2L-07 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%) SPD30N03S2L-07 . 29-07-2008 page 6
13 typ. avalanche energy e as = f ( t j ) par.: i d = 30 a , v dd = 25 v, r gs = 25 w 25 45 65 85 105 125 145 c 185 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 30 a pulsed 0 10 20 30 40 50 60 nc 80 q gate 0 2 4 6 8 10 12 v 16 SPD30N03S2L-07 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 27 28 29 30 31 32 33 34 v 36 SPD30N03S2L-07 v (br)dss SPD30N03S2L-07 . 29-07-2008 page 7
package outline: pg-to252-3 SPD30N03S2L-07 29-07-2008 page 8
29-07 -2008 page 9 SPD30N03S2L-07
|
